| PART |
Description |
Maker |
| MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM
Macronix International Co., Ltd.
|
| 27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
| KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LP62S2048AM-55LLT LP62S2048AM-70LLT LP62S2048A-T L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM
CAC 3C 3#12 PIN PLUG
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| CAT24WC256 CAT24WC256KA-1.8TE13 CAT24WC256KA-3TE13 |
2.5V-6.0V 256K-bit IIC serial CMOS EEPROM
3V-5.5V 256K-bit IIC serial CMOS EEPROM
1.8V-6.0V 256K-bit IIC serial CMOS EEPROM
256K-Bit I2C Serial CMOS E2PROM
|
Catalyst Semiconductor
|
| 27C2000 MX27C2000 MX27C2000MC-10 MX27C2000MC-12 MX |
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDSO32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PDIP32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 256K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 85 256K X 8 OTPROM, 45 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85
Single Output LDO, 3.0A, Fixed(3.3V), Fast Transient Response, Reverse Current Protection 5-DDPAK/TO-263 -40 to 85
|
MACRONIX INTERNATIONAL CO LTD
PROM
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| UPD444016LG5-A10-7JF UPD444016LG5-A12-7JF UPD44401 |
256K X 16 STANDARD SRAM, 8 ns, PDSO44
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT 4分位CMOS快速静态存储器256K字由16
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111M |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40
SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA
|
Macronix International Co., Ltd.
PROM
MCNIX[Macronix International]
|
| KM616U4000C |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V53C104HK55L V53C104HP60L |
IC OPAMP DUAL 16V DIP8
ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 超高性能，低功耗，256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
